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PDD4964 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 60A, RDS(ON) =6.7mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDD4964
Manufacturer Potens semiconductor
File Size 671.27 KB
Description N-Channel MOSFET
Datasheet download datasheet PDD4964 Datasheet
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40V N-Channel MOSFETs PDD4964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 40V RDSON 6.7m ID 60A Features  40V, 60A, RDS(ON) =6.
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