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PDD6701 - N+P Dual Channel MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 4.5V Gate Drive.

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Datasheet Details

Part number PDD6701
Manufacturer Potens semiconductor
File Size 860.62 KB
Description N+P Dual Channel MOSFETs
Datasheet download datasheet PDD6701 Datasheet

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Full PDF Text Transcription

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60V N+P Dual Channel MOSFETs PDD6701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252-4L Pin Configuration D1 D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 19A -17A Features  Fast switching  Green Device Available  Suit for 4.
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