PDEJ2210Z
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for 1.8V Gate Drive Applications
- G-S ESD protection diode embedded
Applications
- Load Switch
