PDF4963 Key Features
- 40V, -32.5A, RDS(ON) =17mΩ@VGS = -10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDF4963
- Manufacturer: Potens semiconductor
- Size: 779.34 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDF01N65 | N-Channel MOSFETs |
| PDF02N65 | N-Channel MOSFETs |
| PDF03N60 | N-Channel MOSFETs |
| PDF03N65 | N-Channel MOSFETs |
| PDF03N70 | N-Channel MOSFETs |
PDF4963 Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.