PDF50N20 Key Features
- 200V,30A, RDS(ON) =24mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDF50N20
- Manufacturer: Potens semiconductor
- Size: 679.33 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDF01N65 | N-Channel MOSFETs |
| PDF02N65 | N-Channel MOSFETs |
| PDF03N60 | N-Channel MOSFETs |
| PDF03N65 | N-Channel MOSFETs |
| PDF03N70 | N-Channel MOSFETs |
PDF50N20 Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.