Potens semiconductor PDF6901
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDF6901 |
|---|---|
| Datasheet | PDF6901 Download |
| Manufacturer |  Potens semiconductor |
| Description | P-Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220F Pin Configuration D G BVDSS -60V RDSON 10.2m ID -50AFEATURES
● -60V,-50A, RDS(ON) 10.2mΩ@VGS = -10V● Fast switching
● Green Device Available
● Suit for -4.5V Gate Drive
APPLICATIONS
APPLICATIONS
● POLAPPLICATIONS
● Load Switch● LED Application GDS S
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Ene
