PDH8966A Key Features
- 80V,70A, RDS(ON) =12mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDH8966A
- Manufacturer: Potens semiconductor
- Size: 717.96 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDH8974 | N-Channel MOSFETs |
| PDH0966A | N-Channel MOSFETs |
| PDH0970 | N-Channel MOSFETs |
| PDH0974 | N-Channel MOSFETs |
| PDH0980 | N-Channel MOSFETs |
PDH8966A Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.