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PDL0906 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,6.5A, RDS(ON) =95mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDL0906

Datasheet Details

Part number PDL0906
Manufacturer Potens semiconductor
File Size 666.10 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDL0906 Datasheet
Additional preview pages of the PDL0906 datasheet.

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Full PDF Text Transcription

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60V N-Channel MOSFETs PDL0906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D S D G G D S BVDSS 100V RDSON 95m ID 6.5A Features  100V,6.
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