PDL6909 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

-60V,-3.2A, RDS(ON) =105mΩ@VGS = -10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDL6909
Manufacturer	Potens semiconductor
File Size	850.78 KB
Description	P-Channel MOSFET
Datasheet	PDL6909 Datasheet
Additional preview pages of the PDL6909 datasheet.

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Full PDF Text Transcription

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Preliminary Datasheet 60V P-Channel MOSFETs PDL6909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT223 Pin Configuration D S D G G D S BVDSS -60V RDSON 105m ID -3.2A Features  -60V,-3.

Published: Aug 18, 2018 |