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PDN2312S - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDN2312S
Manufacturer Potens semiconductor
File Size 403.85 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDN2312S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V N-Channel MOSFETs PDN2312S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS 20V RDSON 19m ID 6.7A Features  20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.