PDN2312S Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration BVDSS 20V RDSON 19m ID 6.7A Features - 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for 1.8V Gate Drive Applications Applications - Notebook - Load Switch - Hend-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Power...