PDN2317S Key Features
- 20V,-2.5A, RDS(ON) =160mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive
- Part: PDN2317S
- Manufacturer: Potens semiconductor
- Size: 468.24 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDN2311S | P-Channel MOSFET |
| PDN2312S | N-Channel MOSFETs |
| PDN2313S | P-Channel MOSFET |
| PDN2314S | N-Channel MOSFETs |
| PDN2315S | P-Channel MOSFET |
PDN2317S Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.