PDN2317S
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 20V,-2.5A, RDS(ON) =160mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive Applications
Applications
- Load Switch
