PDN3612S Key Features
- 30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for 2.5V Gate Drive
- Part: PDN3612S
- Manufacturer: Potens semiconductor
- Size: 566.84 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDN3611S | P-Channel MOSFET |
| PDN3643 | P-Channel MOSFETs |
| PDN3909S | P-Channel MOSFET |
| PDN3911S | P-Channel MOSFETs |
| PDN3912S | N-Channel MOSFETs |
PDN3612S Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.