PDN3643 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-4.8A, RDS(ON) =32mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -2.5V Gate Drive.

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PDN3643 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDN3643
Manufacturer	Potens semiconductor
File Size	575.52 KB
Description	P-Channel MOSFETs
Datasheet	PDN3643 Datasheet

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30V P-Channel MOSFETs PDN3643 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3 Pin Configuration D S G G D S BVDSS -30V RDSON 32m ID -4.8A Features  -30V,-4.8A, RDS(ON) =32mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -2.