PDN3643
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 30V,-4.8A, RDS(ON) =32mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -2.5V Gate Drive Applications
- RoHS pliant & Halogen Free
Applications
- Load Switch
