PDN4911S Key Features
- 40V,-2.9A, RDS(ON) =68mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive
- Part: PDN4911S
- Manufacturer: Potens semiconductor
- Size: 776.83 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDN001N60S | N-Channel MOSFETs |
| PDN02P15S | P-Channel MOSFETs |
| PDN0910S | N-Channel MOSFETs |
| PDN0954S | N-Channel MOSFETs |
| PDN2307 | P-Channel MOSFETs |
PDN4911S Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.