PDN6912S Key Features
- 60V,3.2A, RDS(ON) =75mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
- Part: PDN6912S
- Manufacturer: Potens semiconductor
- Size: 723.66 KB
Related Potens semiconductor Datasheets
| Part Number | Description |
|---|---|
| PDN6911S | P-Channel MOSFET |
| PDN001N60S | N-Channel MOSFETs |
| PDN02P15S | P-Channel MOSFETs |
| PDN0910S | N-Channel MOSFETs |
| PDN0954S | N-Channel MOSFETs |
PDN6912S Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.