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PDN9313S - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -25V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number PDN9313S
Manufacturer Potens semiconductor
File Size 575.78 KB
Description P-Channel MOSFET
Datasheet download datasheet PDN9313S Datasheet

Full PDF Text Transcription for PDN9313S (Reference)

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25V P-Channel MOSFETs PDN9313S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technol...

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ct transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS -25V RDSON 65mΩ ID -4.1A Features  -25V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.

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