PDN9313S Key Features
- 25V,-4.1A, RDS(ON) =65mΩ@VGS = -4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive
- Part: PDN9313S
- Manufacturer: Potens semiconductor
- Size: 575.78 KB
Related Potens semiconductor Datasheets
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|---|---|
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PDN9313S Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.