Potens semiconductor PDP0959
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDP0959 |
|---|---|
| Datasheet | PDP0959 Download |
| Manufacturer |  Potens semiconductor |
| Description | P-Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220 Pin Configuration D GDS G S BVDSS -100V RDSON 45m ID -35AFEATURES
● -100V,-35A, RDS(ON) 45mΩ@VGS = -10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Networking● Load Switch
● LED applications
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃ unless otherwise noted) Symbol VDS VGS ID ID M EAS IAS PD T STG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Aval
