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PDP0974A - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,100A, RDS(ON) =6.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDP0974A
Manufacturer Potens semiconductor
File Size 479.31 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDP0974A Datasheet
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100V N-Channel MOSFETs PDP0974A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S BVDSS 100V RDSON 6.5m ID 100A Features  100V,100A, RDS(ON) =6.
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