PDP30N15 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

150V,28A, RDS(ON) 65mΩ@VGS = 10V.
VGS Guarantee ± 25V.
Improved dv/dt capability.
Fast switching.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDP30N15
Manufacturer	Potens semiconductor
File Size	698.14 KB
Description	N-Channel MOSFETs
Datasheet	PDP30N15 Datasheet
Additional preview pages of the PDP30N15 datasheet.

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Full PDF Text Transcription

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150V N-Channel MOSFETs PDP30N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 20, 2018 |