Potens semiconductor PDP6910
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDP6910 |
|---|---|
| Datasheet | PDP6910 Download |
| Manufacturer |  Potens semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220 Pin Configuration D G BVDSS 60V RDSON 52m ID 24AFEATURES
● 60V,24A, RDS(ON) =52mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting GDS S
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 S
