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PDP6910 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,24A, RDS(ON) =52mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDP6910

Datasheet Details

Part number PDP6910
Manufacturer Potens semiconductor
File Size 694.83 KB
Description N-Channel MOSFET
Datasheet download datasheet PDP6910 Datasheet
Additional preview pages of the PDP6910 datasheet.

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Full PDF Text Transcription

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60V N-Channel MOSFETs PDP6910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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