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PDP6965A - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-61A, RDS(ON) 22mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDP6965A

Datasheet Details

Part number PDP6965A
Manufacturer Potens semiconductor
File Size 772.96 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDP6965A Datasheet
Additional preview pages of the PDP6965A datasheet.

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Full PDF Text Transcription

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60V P-Channel MOSFETs PDP6965A General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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