Potens semiconductor PDP6970
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDP6970 |
|---|---|
| Datasheet | PDP6970 Download |
| Manufacturer |  Potens semiconductor |
| Description | N-Channel MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. TO220 Pin Configuration D GDS G S BVDSS 60V RDSON 2.2m ID 170AFEATURES
● 60V,170A, RDS(ON) =2.2mΩ @VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting
● Quick Charger
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pu
