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PDP6980-5 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 65V,180A, RDS(ON) =2.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDP6980-5

Datasheet Details

Part number PDP6980-5
Manufacturer Potens semiconductor
File Size 749.67 KB
Description N-Channel MOSFET
Datasheet download datasheet PDP6980-5 Datasheet
Additional preview pages of the PDP6980-5 datasheet.

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Full PDF Text Transcription

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65V N-Channel MOSFETs PDP6980-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D G BVDSS 65V RDSON 2.2m ID 180A Features  65V,180A, RDS(ON) =2.
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