PDP8966A - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

80V,70A, RDS(ON) =12mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

📥 Download Datasheet

Datasheet Details

Part number	PDP8966A
Manufacturer	Potens semiconductor
File Size	462.25 KB
Description	N-Channel MOSFET
Datasheet	PDP8966A Datasheet
Additional preview pages of the PDP8966A datasheet.

📁 Similar Datasheet

PDP-428XG - (PDP-428XG / PDP-508XG) PLASMA TELEVISION (Pioneer)
PDP-433PE - Service manual (Pioneer)
PDP-433PU - Service manual (Pioneer)
PDP-501MX - PLASMA DISPLAY Service Manual (Pioneer)
PDP-508XG - (PDP-428XG / PDP-508XG) PLASMA TELEVISION (Pioneer)
PDP-V402 - Display Tech Manual (Pioneer)
PDP-V402 - Display (Pioneer)
PDP-V402E - Display Tech Manual (Pioneer)
PDP-V402E - Display (Pioneer)
PDP42C4 - WXGA PDP MODULE (LG)

Other Datasheets by Potens semiconductor

PDP8902 - N-Channel MOSFET
PDP8970 - N-Channel MOSFET
PDP8974 - N-Channel MOSFET
PDP80N15 - N-Channel MOSFETs
PDP01N65 - N-Channel MOSFETs
PDP02N65 - N-Channel MOSFETs
PDP03N60 - N-Channel MOSFETs
PDP03N65 - N-Channel MOSFETs

Full PDF Text Transcription

Click to expand full text

80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 20, 2018 |