Datasheet Details
| Part number | PDQ0854-R |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 777.70 KB |
| Description | Dual N-Channel MOSFETs |
| Datasheet |
 PDQ0854-R Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 100V,1.5A, RDS(ON) =330mΩ @VGS = 10V.
- Improved dv/dt capability.
- Fast switching.
- Green Device Available SOT23-6-R Pin Configuration D1 D1 S2 D2 G1 G2 G2 G1 S1 S1.