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PDQ2116 - N+P Channel MOSFETs

General Description

field effect transistors are using trench DMOS technology.

Key Features

  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDQ2116
Manufacturer Potens semiconductor
File Size 898.12 KB
Description N+P Channel MOSFETs
Datasheet download datasheet PDQ2116 Datasheet

Full PDF Text Transcription for PDQ2116 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDQ2116. For precise diagrams, and layout, please refer to the original PDF.

20V N+P Dual Channel MOSFETs PDQ2116 General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS techn...

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er BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 100m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-6 Dual Pin Configuration D1 D1 S1 D2 G1 G G2 D2 Features  Fast switching  Green Device Available  Suit for 1.

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