PDR01N60 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available ID 1A TO251 Pin Configuration D GD S G S.

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PDR01N60 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDR01N60
Manufacturer	Potens semiconductor
File Size	569.81 KB
Description	N-Channel MOSFETs
Datasheet	PDR01N60 Datasheet

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600V N-Channel MOSFETs PDR01N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 600V RDSON 10.