Potens semiconductor PDS0982
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDS0982 |
|---|---|
| Datasheet | PDS0982 Download |
| Manufacturer |  Potens semiconductor |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. SOP8 Pin Configuration D D DD D G G S SS S BVDSS 100V RDSON 14.5m ID 7.4AFEATURES
● 100V,7.4A, RDS(ON) =14.5mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Networking● Load Switch
● LED applications
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TA=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Rating 100 +20/-12 7.4 5.9 29.6 115 48 1.47 0.01 -50 to 150 -50 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Typ. --- Max.
