PDS2305 Datasheet | Potens semiconductor

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DDD D G SSS BVDSS -20V RDSON 16mΩ ID -11A Features - -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.8V Gate Drive Applications Applications - Notebook - Load Switch - Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Power...