PDS2305 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for -1.8V Gate Drive.

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PDS2305 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS2305
Manufacturer	Potens semiconductor
File Size	571.71 KB
Description	P-Channel MOSFETs
Datasheet	PDS2305 Datasheet

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20V P-Channel MOSFETs PDS2305 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DDD D G SSS G D S BVDSS -20V RDSON 16mΩ ID -11A Features  -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.