PDS4701 Datasheet | Potens semiconductor

Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOP-8L Pin Configuration D2D2 D1 D1 D1 D2 S2G2 G1 G1 S1 G2 S1 S2 BVDSS 40V -40V RDSON 32m 40m ID 6.7A -7.2A Features - Fast switching - Green Device Available - Suit for 4.5V Gate Drive Applications Applications - DC Fan - Motor Drive Applications - Networking - Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID M T STG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain...