Potens semiconductor PDS49B4
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | PDS49B4 |
|---|---|
| Datasheet | PDS49B4 Download |
| Manufacturer |  Potens semiconductor |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. SOP8 Pin Configuration D D DD D GG S SS S BVDSS 40V RDSON 13.5m ID 7.9AFEATURES
● 40V, 7.9A, RDS(ON)=13.5mΩ@VGS = 10V● Improved dv/dt capability
● Fast switching
● Green Device Available
APPLICATIONS
● Notebook● Load Switch
● LED applications
● Hand-Held Device
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanched Current2 Power Dissipation (TA=25℃) Power Dissipation – Derate above 25℃ Storage Temperature Range Operating Junction Temperature Range Rating 40 +20/-12 7.9 6.3 31.6 24.2 22 1.47 0.12 -55 to 150 -55 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. --- Max.
