PDS8966A - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

80V,19A, RDS(ON) =13mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

Potens semiconductor

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Datasheet Details

Part number	PDS8966A
Manufacturer	Potens semiconductor
File Size	690.73 KB
Description	N-Channel MOSFET
Datasheet	PDS8966A Datasheet
Additional preview pages of the PDS8966A datasheet.

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80V N-Channel MOSFETs PDS8966A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Published: Aug 18, 2018 |