Datasheet Summary
650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply
BVDSS 650V
RDSON 0.75
Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
ID 12A
TO220F Pin Configuration GDS
Applications
- High efficient switched mode power supplies
- TV Power
- Adapter/charger
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