Power Device PFF13N50
500V N-Channel MOSFET
| Part No. | PFF13N50 |
|---|---|
| Datasheet | PFF13N50 Download |
| Manufacturer | Power Device |
| Description | 500V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION Electronic lamp ballasts based on half bridge topology PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies) PFP13N50/PFF13N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on)typ = 0.46 Ω ID = 12.5 A Drain { Gate {● ◀▲
●
● Source { TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PFP13N50 PFF13N50 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode...
