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2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1998, Power Innovations Limited, UK AUGUST 1998
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
q
Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
V(BR) DEVICE MINIMUM V 2EL2 2EL3 2EL4 ±245 V(BO) MINIMUM V ±265 ±200 ±215 V(BO) MAXIMUM V ±400 ±265 ±265
CELL PACKAGE (SIDE VIEW)
T(A)
R(B)
MD4XANA
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Rated for International Surge Wave Shapes
ITU-T K28 DEVICE (10/700) ITSP A 2EL2 2EL3 2EL4 ±125 ±125 ±125 GR-974-CORE (10/1000) ITSP A ±100 ±100 ±100
device symbol
T
SD4XAA
R Terminals T and R correspond to the alternative line designators of A and B
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Gas Discharge Tube (GDT) Replacement
Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current E