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2EL3 Datasheet PDF

Power Innovations Limited 2EL3

the 2ELx must be installed in a housing which maintains a stable microclimate during these tests (e.g. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device.
Part No. 2EL3
Datasheet 2EL3 Download
Manufacturer
Power Innovations Limited
Description BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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2EL3 datasheet page 1 preview
2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1998, Power Innovations Limited, UK AUGUST 1998 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM V 2EL2 2EL3 2EL4 ±245 V(BO) MINIMUM V ±265 ±200 ±215 V(BO) MAXIMUM V ±400 ±265 ±265 CELL PACKAGE (SIDE VIEW) T(A) R(B) MD4XANA q Rated for International Surge Wave Shapes ITU-T K28 DEVICE (10/700) ITSP A 2EL2 2EL3 2EL4 ±125 ±125 ±125 GR-974-CORE (10/1000) ITSP A ±100 ±100 ±100 device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B q q Gas Discharge Tube (GDT) Replacement Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions q description These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
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