Power Innovations Limited BD241E
NPN SILICON POWER TRANSISTORS
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK SEPTEMBER 1981 - REVISED MARCH 1997 q q q q 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD241D Collector-emitter voltage (RBE = 100 Ω) BD241E BD241F BD241D Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2.