Power Innovations Limited BDT60
PNP Transistor
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDT60 Collector-base voltage (IE = 0) BDT60A BDT60B BDT60C BDT60 Collector-emitter voltage (IB = 0) BDT60A BDT60B BDT60C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.