BDT60
Key Features
- 0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1
- 5 TC = -40°C TC = 25°C TC = 100°C 0 -0
- Part: BDT60
- Description: PNP Transistor
- Category: Transistor
- Manufacturer: Power Innovations Limited
- Size: 168.48 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| BDT60B | New Jersey Semi-Conductor | PNP SILICON POWER DARLINGTONS |
| BDT63 | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT63A | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT63B | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT64 | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT64A | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT64B | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT64C | Comset Semiconductors | Silicon Darlington Power Transistor |
| BDT65 | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BDT65A | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |