Power Innovations Limited BDW63D
NPN Transistor
BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW63 BDW63A Collector-base voltage (IE = 0) BDW63B BDW63C BDW63D BDW63 BDW63A Collector-emitter voltage (IB = 0) (see Note 1) BDW63B BDW63C BDW63D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1.