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BUL791 NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED SEPTEMBER 1997
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Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions
B C E
TO-220 PACKAGE (TOP VIEW)
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1 2 3
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Pin 2 is in electrical contact with the mounting base.
BUL791 Datasheet
