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BULD125KC - NPN Transistor

Description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).

This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode.

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Datasheet preview – BULD125KC

Datasheet Details

Part number BULD125KC
Manufacturer Power Innovations Limited
File Size 167.30 KB
Description NPN Transistor
Datasheet download datasheet BULD125KC Datasheet
Additional preview pages of the BULD125KC datasheet.

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Full PDF Text Transcription

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BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK MAY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability B C E TO-220 PACKAGE (TOP VIEW) q 1 2 3 q q q Pin 2 is in electrical contact with the mounting base. MDTRACA q q device symbol C description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s).
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