BULD125KC Datasheet | Power Innovations Limited

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode. E absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (V BE = 0) Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Maximum average continuous diode forward current at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%. SYMBOL VCES VCBO VCEO V EBO IC ICM IB IBM Ptot IE(av) Tj Tstg VALUE 600 600 400 9 8 12 4 6 85 0.5 -65 to +150 -65 to +150 UNIT V V V V A A A A W A °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1994 - REVISED SEPTEMBER 1997 electrical characteristics at 25°C case temperature PARAMETER V CEO(sus) ICES IEBO V BE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter...