BUPD1520 Datasheet | Power Innovations Limited

BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1999, Power Innovations Limited, UK MAY 1999 - REVISED SEPTEMBER 1999 Designed for Self Oscillating Inverter Applications Rugged 1500 V Planar Construction Integral Free-Wheeling Anti-Parallel Diode TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA device symbol E absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (IB = 0) Collector-emitter voltage (VBE = 0) Emitter-base voltage (IC = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%. SYMBOL VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg TL VALUE 700 1500 11 2 2.5 2 2.5 50 -55 to +125 -55 to +150 300 UNIT V V V A A A A W °C °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 electrical characteristics at 25°C case temperature PARAMETER VCEO VCBO VEBO ICEO ICES IEBO Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage Collector-emitter saturation voltage Forward current transfer ratio IC = IC = IEB = 1 m A 100 µA 1 m A IB = 0 VBE = 0 IC = 0 IC = 500 m A IC = 1 A IC = 2 A IC = 250 m A IC = 500 m A IC = 10 m A (see Notes 2 and 3) IC = 100 m A IC = 250 m A IC = 500 m A (see Notes 2 and 3) 10 10 10 7 0.3 0.7 21 25...