Power Innovations Limited BUPD1520
NPN Silicon Transistor
| Part No. | BUPD1520 |
|---|---|
| Datasheet | BUPD1520 Download |
| Manufacturer |  Power Innovations Limited |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
Rugged 1500 V Planar Construction Integral Free-Wheeling Anti-Parallel Diode B C E TO-220 PACKAGE (TOP VIEW) G G 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA device symbol C B E absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (IB = 0) Collector-emitter voltage (VBE = 0) Emitter-base voltage (IC = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%. SYMBOL VCEO VCES VEBO IC ICM IB IBM Ptot Tj Tstg TL VALUE 700 1500 11 2 2.5 2 2.5 50 -55 to +125 -55 to +150 300 UNIT V V V A A A A W °C °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
