Power Innovations Limited TIPL760B
NPN SILICON POWER TRANSISTORS
TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1200 Volt Blocking Capability 75 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) B C E 1 2 3 q q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. TIPL760B TIPL760C TIPL760B TIPL760C TIPL760B TIPL760C SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 1100 1200 1100 1200 500 550 10 4 8 75 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date.