TIPL770 Datasheet PDF

TIPL770 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MARCH 1984 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 2.5 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 850 Volt Blocking Capability 50 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) B C E 1 2 3 q q Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 850 400 10 2.5 8 50 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date.