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TISP3125F3, TISP3150F3, TISP3180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE ‘3125F3 ‘3150F3 ‘3180F3 VDRM V 100 120 145 V(BO) V 125 150 180
D PACKAGE (TOP VIEW)
T NC NC R
1 2 3 4
8 7 6 5
G G G G
MDXXAE
NC - No internal connection P PACKAGE (TOP VIEW)
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Planar Passivated Junctions Low Off-State Current < 10 µA Rated for International Surge Wave Shapes
WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/560 µs 0.5/700 µs 10/700 µs 10/1000 µs STANDARD FCC Part 68 ANSI C62.