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TISP4125F3, TISP4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE ‘4125F3 ‘4150F3 ‘4180F3 VDRM V 100 120 145 V(BO) V 125 150 180
D PACKAGE (TOP VIEW)
T T T T
1 2 3 4
8 7 6 5
R R R R
MDXXAI
Specified ratings require the connection of pins 1, 2, 3 and 4 for the T terminal. SL PACKAGE (TOP VIEW)
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Planar Passivated Junctions Low Off-State Current < 10 µA Rated for International Surge Wave Shapes
WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/560 µs 0.5/700 µs 10/700 µs 10/1000 µs STANDARD FCC Part 68 ANSI C62.