Datasheet4U Logo Datasheet4U.com

PFF4N60 - N-channel MOSFET

Description

These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply.

Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 2.3 Ω)@VGS=10V.
  • Gate Charge (Typ. 27nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet preview – PFF4N60

Datasheet Details

Part number PFF4N60
Manufacturer PowerGate
File Size 768.53 KB
Description N-channel MOSFET
Datasheet download datasheet PFF4N60 Datasheet
Additional preview pages of the PFF4N60 datasheet.

📁 Similar Datasheet

Other Datasheets by PowerGate

Full PDF Text Transcription

Click to expand full text
PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction.
Published: |