PowerGate PFF4N60
N-channel MOSFET
| Part No. | PFF4N60 |
|---|---|
| Datasheet | PFF4N60 Download |
| Manufacturer | PowerGate |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 2.3 Ω)@VGS=10V
● Gate Charge (Typ. 27nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction. Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC...
