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PFF7N60 - N-channel MOSFET

Description

These N-channel enhancement mode field effect power transistor using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply.

Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 1.2 Ω)@VGS=10V.
  • Gate Charge (Typ. 35nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested PFF7N60 PFP7N60 1 2 3 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – PFF7N60

Datasheet Details

Part number PFF7N60
Manufacturer PowerGate
File Size 556.09 KB
Description N-channel MOSFET
Datasheet download datasheet PFF7N60 Datasheet
Additional preview pages of the PFF7N60 datasheet.

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Full PDF Text Transcription

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PFP7N60/PFF7N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.2 Ω)@VGS=10V ■ Gate Charge (Typ. 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested PFF7N60 PFP7N60 1 2 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode field effect power transistor using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction. BVDSS : 600V ID : 7.0A RDS(ON) : 1.
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