PFF7N60 Datasheet | PowerGate

Features - High ruggedness - RDS(ON) (Max 1.2 Ω)@VGS=10V - Gate Charge (Typ. 35n C) - Improved dv/dt Capability - 100% Avalanche Tested PFP7N60 1 2 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode field effect power transistor using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction. BVDSS : 600V ID : 7.0A RDS(ON) : 1.2ohm Absolute maximum ratings Symbol Parameter VDSS IDM VGS EAS EAR dv/dt TSTG, TJ Drain to Source Voltage Continuous Drain Current (@TC=25o C) Continuous Drain Current (@TC=100o C) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive...