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PFP3205 Datasheet PDF

PowerGate PFP3205

This power MOSFET has an excellent avalanche characteristics, and low RDS(ON) and low gate charge as well by using PowerGate semiconductor’s own and specialized design technology, These are well suited for high stress system such like motor control, amplifier, UPS, or DC to DC converter Which needs lower gate charge and on-resistance.
Part No. PFP3205
Datasheet PFP3205 Download
Manufacturer PowerGate
Description N-channel Power MOSFET
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PFP3205 datasheet page 1 preview

GENERAL DESCRIPTION

1 3 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive Avalanche Energy (note 1) Peak diode Recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. PFP3205 55 110 80 390 ±20 2900 20 5.0 200 1.34 -55 ~ + 175 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Thermal resistance, Junction to case Thermal resistance, Case to Sink Thermal resistance, Junction to ambient Typ. Max. 0.75 0.5 62.5 Unit oC/W oC/W oC/W Copyright @ PowerGate Semiconductor USA. All rights reserved. 1/6 PFP3205 Electrical characteristic ( TC = 25oC unless o...
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