PFP4N60 Datasheet | PowerGate

PFP4N60/PFF4N60 N-channel MOSFET Features - High ruggedness - RDS(ON) (Max 2.3 Ω)@VGS=10V - Gate Charge (Typ. 27nC) - Improved dv/dt Capability - 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction. Absolute...