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PFP4N60 - N-channel MOSFET

General Description

These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply.

Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 2.3 Ω)@VGS=10V.
  • Gate Charge (Typ. 27nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number PFP4N60
Manufacturer PowerGate
File Size 768.53 KB
Description N-channel MOSFET
Datasheet download datasheet PFP4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode field effect power transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply. Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics. These devices are well suited for high efficiency switching Mode power supplies and active power factor correction.