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A2S56D30CTP

Manufacturer: Powerchip Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

A2S56D30CTP datasheet preview

Datasheet Details

Part number A2S56D30CTP
Datasheet A2S56D30CTP A2S56D40CTP Datasheet (PDF)
File Size 620.59 KB
Manufacturer Powerchip Semiconductor
Description 256Mb DDR SDRAM
A2S56D30CTP page 2 A2S56D30CTP page 3

A2S56D30CTP Overview

All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strob , and output data and data strobe are referenced on both edges of CLK. The A2S56D20/30/40 CTP achieves very high speed clock rate up to 200 MHz.

A2S56D30CTP Key Features

  • Double data rate architecture ; two data transfers per clock cycle
  • Bidirectional , data strob (DQS) is transmitted/received with data
  • Differential clock input (CLK and /CLK)
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
  • mands entered on each positive CLK edge
  • Data and data mask referenced to both edges of DQS
  • 4 bank operation controlled by BA0 , BA1 (Bank Address)
  • /CAS latency
  • 2.0 / 2.5/ 3 (programmable) ; Burst length
  • 2 / 4 / 8 (programmable) Burst type
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More Datasheets from Powerchip Semiconductor

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Part Number Description
A2S56D20CTP 256Mb DDR SDRAM
A2S56D40CTP 256Mb DDR SDRAM

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